Photoluminescence of d-doped ZnSe:„Te,N... grown by molecular beam epitaxy
نویسندگان
چکیده
We have studied the low temperature photoluminescence ~PL! of a d-doped ZnSe:~Te,N! system using two different types of samples, one with single d layers separated by undoped spacers and the other with three adjacent d layers in each doping cycle. We have concluded that both Te and N participate in radiative recombination. We observe a relatively low PL efficiency ~compared to samples without N! for these samples, and we suggest that Auger recombination is a likely mechanism, although a role of slow donor–acceptor pair PL and consequent nonradiative processes cannot be ruled out. © 2001 American Institute of Physics. @DOI: 10.1063/1.1389483#
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